1310nm超輻射發(fā)光二極管芯片
lovi的超輻射發(fā)光二極管芯片(sled)為1310nm。高性能低極化和低紋波。本設(shè)計(jì)采用多量子阱有源層脊波導(dǎo)結(jié)構(gòu)，表面涂有增透層。
chip configuration:?
top contact: anode?
bottom contact: cathode?
chip cavity length: 750 (±20) um?
chip width: 250 (±20) um?
thickness: 100 (±12.5) um
angle: 22 degrees
